This device is a 30 V N-channel HEXFET power MOSFET in an SO-8 package. It is specified for up to 18 A continuous drain current at 25°C and 14.4 A at 70°C, with maximum drain-to-source on-resistance of 4.8 mΩ at 10 V gate drive and 6.8 mΩ at 4.5 V gate drive. Typical total gate charge is 17 nC, with 2315 pF input capacitance and 449 pF output capacitance. The part is intended for synchronous MOSFET use in notebook processor power supplies and for synchronous rectification in isolated DC-DC converters. The datasheet states lead-free construction and an operating junction temperature range from -55°C to +150°C.
Infineon IRF8736PBF, IRF8736TRPBF technical specifications.
| Drain-to-Source Voltage | 30V |
| Gate-to-Source Voltage | ±20V |
| Continuous Drain Current @ 25°C | 18A |
| Continuous Drain Current @ 70°C | 14.4A |
| Pulsed Drain Current | 144A |
| Power Dissipation @ 25°C | 2.5W |
| Operating Junction Temperature Range | -55 to +150°C |
| Thermal Resistance, Junction-to-Drain Lead | 20°C/W |
| Thermal Resistance, Junction-to-Ambient | 50°C/W |
| Drain-to-Source On-Resistance @ VGS=10V, ID=18A | 4.8 maxmΩ |
| Drain-to-Source On-Resistance @ VGS=4.5V, ID=14.4A | 6.8 maxmΩ |
| Gate Threshold Voltage | 1.35 to 2.35V |
| Total Gate Charge | 17 typnC |
| Gate-to-Drain Charge | 5.8 typnC |
| Input Capacitance | 2315 typpF |
| Output Capacitance | 449 typpF |
| Reverse Transfer Capacitance | 219 typpF |
| Avalanche Energy | 126 maxmJ |
| Reverse Recovery Time | 24 maxns |
| Reverse Recovery Charge | 29 maxnC |
| Lead-free | Yes |
No datasheet is available for this part.
