Infineon
IRF9540NS
Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
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Technical Specifications
Infineon IRF9540NS technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Number of Elements | 1 |
Compliance
| RoHS | No |
| Eccn Code | EAR99 |
| HTS Code | 8541.29.00.75 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IRF9540NS Datasheet
Download the complete datasheet for Infineon IRF9540NS to view detailed technical specifications.
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