This P-channel power MOSFET is rated for -55 V drain-to-source voltage and -19 A continuous drain current in a D2PAK (TO-263) surface-mount package. It offers a maximum RDS(on) of 100 mΩ at 10 V, typical total gate charge of 23.3 nC, and typical gate-drain charge of 10.7 nC. The device supports up to 68 W power dissipation, has a maximum junction temperature of 175 °C, and features 2.2 K/W maximum junction-to-case thermal resistance. Its gate threshold voltage ranges from -2 V to -4 V and the silicon is optimized for switching applications below 100 kHz.
Infineon IRF9Z34NSTRLPBF, IRF9Z34NSTRRPBF technical specifications.
| Transistor polarity | P-Channel |
| Drain-to-source voltage (VDS) max | -55V |
| Continuous drain current (ID) max @25°C | -19A |
| Drain-source on-resistance (RDS(on)) max @10V | 100mΩ |
| Gate-drain charge (Qgd) | 10.7nC |
| Total gate charge (Qg) typ @10V | 23.3nC |
| Power dissipation (Ptot) max | 68W |
| Thermal resistance junction-to-case (RthJC) max | 2.2K/W |
| Junction temperature (Tj) max | 175°C |
| Gate threshold voltage (VGS(th)) range | -2 to -4V |
| Gate threshold voltage (VGS(th)) | -3V |
| Gate-source voltage (VGS) max | 20V |
| Mounting | SMD |
| Moisture sensitivity level | 1 |
| RoHS | Compliant |
No datasheet is available for this part.
