Infineon
IRFD012
Small Signal Field-Effect Transistor, 1.4A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, COMPACT, HD-1, SIMILAR TO MO-001AN, DIP-4
Small Signal Field-Effect Transistor, 1.4A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, COMPACT, HD-1, SIMILAR TO MO-001AN, DIP-4
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Technical Specifications
Infineon IRFD012 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 4 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
Compliance
| RoHS | No |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IRFD012 Datasheet
Download the complete datasheet for Infineon IRFD012 to view detailed technical specifications.
No datasheet is available for this part.