This device is an N-channel power MOSFET rated for 100 V drain-to-source voltage and 9.4 A continuous drain current at 25°C with VGS = 10 V. It is specified with 0.21 Ω maximum on-resistance and is intended for fast-switching power applications. The IRFR variant uses the D-PAK TO-252AA surface-mount package and is fully avalanche rated. Gate-to-source voltage is rated to ±20 V, and the operating junction and storage temperature range is -55°C to +175°C. The datasheet also specifies 48 W maximum power dissipation at 25°C and lead-free construction.
Sign in to ask questions about the Infineon IRFR120NTRLPBF, IRFR120NTRPBF datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon IRFR120NTRLPBF, IRFR120NTRPBF technical specifications.
| Transistor Type | N-Channel MOSFET |
| Drain-to-Source Voltage | 100V |
| On-Resistance RDS(on) Max | 0.21Ω |
| Continuous Drain Current @ 25°C | 9.4A |
| Continuous Drain Current @ 100°C | 6.6A |
| Pulsed Drain Current | 38A |
| Power Dissipation @ 25°C | 48W |
| Gate-to-Source Voltage | ±20V |
| Single Pulse Avalanche Energy | 91mJ |
| Avalanche Current | 5.7A |
| Repetitive Avalanche Energy | 4.8mJ |
| Peak Diode Recovery dv/dt | 5.0V/ns |
| Operating Junction Temperature Range | -55 to +175°C |
| Thermal Resistance Junction-to-Case Max | 3.1°C/W |
| Thermal Resistance Junction-to-Ambient (PCB mount) Max | 50°C/W |
| Thermal Resistance Junction-to-Ambient Max | 110°C/W |
| Lead-free | Yes |
Download the complete datasheet for Infineon IRFR120NTRLPBF, IRFR120NTRPBF to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
