This device is a single P-channel power MOSFET built on Infineon's IR MOSFET technology. It is rated for a maximum drain-source voltage of -150 V and a continuous drain current of -13 A at 25°C. The part is offered in a surface-mount DPAK (TO-252) package with a maximum RDS(on) of 580 mΩ, a total gate charge of 44 nC, and a gate-drain charge of 23.3 nC. It supports up to 110 W power dissipation, a 175°C maximum junction temperature, and a 1.4 K/W junction-to-case thermal resistance.
Infineon IRFR6215TRLPBF, IRFR6215TRPBF technical specifications.
| Channel Type | P-Channel |
| Drain-Source Voltage | -150V |
| Continuous Drain Current | -13A |
| Power Dissipation | 110W |
| Gate-Drain Charge | 23.3nC |
| Total Gate Charge | 44nC |
| Drain-Source On-Resistance | 580mΩ |
| Thermal Resistance Junction-to-Case | 1.4K/W |
| Junction Temperature | 175°C |
| Gate-Source Threshold Voltage | -3V |
| Gate-Source Voltage | 20V |
| Mounting Type | SMD |
| Package | DPAK (TO-252) |
| Moisture Sensitivity Level | 1 |
No datasheet is available for this part.
