This device is a P-channel HEXFET power MOSFET rated for -55 V drain-to-source voltage and -11 A continuous drain current at 25°C. It is specified with 0.175 Ω maximum drain-to-source on-resistance at VGS = -10 V and supports fast switching with a typical total gate charge of 13 nC. The datasheet lists a TO-252AA surface-mount package option for the IRFR version, with 38 W maximum power dissipation and a junction temperature range from -55°C to +150°C. It is a lead-free device and is intended for efficient power switching applications.
Sign in to ask questions about the Infineon IRFR9024NTRLPBF, IRFR9024NTRPBF datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon IRFR9024NTRLPBF, IRFR9024NTRPBF technical specifications.
| Channel Type | P-Channel |
| Drain-to-Source Voltage | -55V |
| Continuous Drain Current | -11A |
| Continuous Drain Current at 100°C | -6.6A |
| Pulsed Drain Current | -44A |
| Power Dissipation | 38W |
| Linear Derating Factor | 0.30W/°C |
| Gate-to-Source Voltage | ±20V |
| Drain-to-Source On-Resistance | 0.175Ω |
| Gate Threshold Voltage | -2.0 to -4.0V |
| Forward Transconductance | 2.5S |
| Total Gate Charge | 13nC |
| Input Capacitance | 350pF |
| Output Capacitance | 55pF |
| Reverse Transfer Capacitance | 23pF |
| Operating Junction Temperature Range | -55 to +150°C |
| Thermal Resistance Junction-to-Case | 3.3°C/W |
| Thermal Resistance Junction-to-Ambient (PCB mount) | 50°C/W |
| Body Diode Forward Voltage | -1.6V |
Download the complete datasheet for Infineon IRFR9024NTRLPBF, IRFR9024NTRPBF to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
