Infineon
IRHQ93110
Power Field-Effect Transistor, 2.3A I(D), 100V, 1.1ohm, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC-28
Power Field-Effect Transistor, 2.3A I(D), 100V, 1.1ohm, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC-28
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Technical Specifications
Infineon IRHQ93110 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 28 |
| Terminal Position | QUAD |
| Number of Elements | 4 |
Compliance
| RoHS | No |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IRHQ93110 Datasheet
Download the complete datasheet for Infineon IRHQ93110 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.