This device is a 100 V N-channel power MOSFET built in a DPAK (TO-252) surface-mount package. It uses Infineon's IR MOSFET technology and is specified for logic-level drive, with a maximum on-resistance of 14 mΩ at 10 V gate drive and 16 mΩ at 4.5 V gate drive. The part supports up to 63 A drain current under silicon-limited conditions, with 140 W maximum power dissipation and a maximum junction temperature of 175 °C. It is designed for industrial applications and is RoHS compliant.
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Infineon IRLR3110ZTRLPBF, IRLR3110ZTRPBF technical specifications.
| Channel Type | N |
| Drain-Source Voltage Max | 100V |
| Continuous Drain Current Max (Tc=25°C, silicon limited) | 63A |
| Continuous Drain Current Max (Tc=25°C, package limited) | 42A |
| Power Dissipation Max | 140W |
| Drain-Source On-Resistance Max @ VGS=10V | 14mΩ |
| Drain-Source On-Resistance Max @ VGS=4.5V | 16mΩ |
| Total Gate Charge Typ @ VGS=4.5V | 34nC |
| Gate-Drain Charge | 15nC |
| Gate Threshold Voltage Range | 1 to 2.5V |
| Gate-Source Voltage Max | ±16V |
| Operating Temperature Min | -55°C |
| Junction Temperature Max | 175°C |
| Thermal Resistance Junction-to-Case Max | 1.05K/W |
| Mounting | SMD |
| Moisture Sensitivity Level | 1 |
| RoHS | Compliant |
Download the complete datasheet for Infineon IRLR3110ZTRLPBF, IRLR3110ZTRPBF to view detailed technical specifications.
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