This device is a high-voltage half-bridge gate driver for N-channel MOSFETs and IGBTs with dependent high-side and low-side output channels. It operates with a floating channel up to 600 V, accepts 3.3 V and 5 V logic inputs, and includes undervoltage lockout on both channels. The driver supports a 10 V to 20 V gate-drive supply range and programmable deadtime from about 400 ns to 5 µs for shoot-through prevention. Typical propagation delays are 180 ns turn-on and 220 ns turn-off, and the device is specified for operation from -40 °C to 125 °C ambient. This orderable version is supplied in a 14-lead SOIC package on tape and reel and is RoHS compliant without exemption.
Infineon IRS21834STRPBF technical specifications.
| Topology | Half-bridge gate driver |
| High-side voltage | 600V |
| Gate drive supply range | 10 to 20V |
| Logic input compatibility | 3.3 and 5V |
| Output source current | 1.9 typA |
| Output sink current | 2.3 typA |
| Turn-on propagation delay | 180 typns |
| Turn-off propagation delay | 220 typns |
| Programmable deadtime | 400 to 5000ns |
| Allowable offset transient | 50V/ns |
| Operating ambient temperature | -40 to 125°C |
| Package | 14-lead SOIC (PG-DSO-14-903) |
| RoHS | Compliant without exemption |
No datasheet is available for this part.
