This device is a 600 V half-bridge gate driver IC for driving IGBTs and MOSFETs. It provides typical source and sink drive currents of 0.29 A and 0.6 A, operates from a 10 V to 20 V gate-drive supply, and uses functional junction-isolated level shifting. The device includes undervoltage lockout on both channels, matched propagation delays, cross-conduction prevention logic, and an internal 500 ns deadtime. It is offered in an 8-lead SOIC package and is specified for industrial qualification.
Infineon IRS2308SPBF, IRS2308STRPBF technical specifications.
| Channels | 2 |
| Configuration | Half-Bridge |
| Voltage Class | 600V |
| Input Vcc Range | 10 to 20V |
| Isolation Type | Functional levelshift JI (Junction Isolated) |
| Output Current (Sink) | 0.6A |
| Output Current (Source) | 0.29A |
| Turn Off Propagation Delay | 200ns |
| Turn On Propagation Delay | 220ns |
| VBS UVLO Off | 8.2V |
| VBS UVLO On | 8.9V |
| Internal Deadtime | 500ns |
| Input Logic Compatibility | 3.3, 5, 15V |
| Qualification | Industrial |
| RoHS | Compliant |
| Lead Free | Yes |
| Halogen Free | Yes |
No datasheet is available for this part.
