This 40 V dual N-channel OptiMOS™ 3 power MOSFET is housed in an SO-8 package and uses a logic-level gate drive. It provides up to 9.6 A continuous drain current at 25 °C, with maximum drain-source on-resistance of 17 mΩ at 10 V and 23.6 mΩ at 4.5 V. Typical total gate charge is 6.0 nC at 4.5 V and 13 nC at 10 V, supporting efficient low-power DC-DC stages. The device operates from -55 °C to 150 °C and is 100% avalanche tested. It is lead-free, RoHS compliant, and halogen-free.
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Infineon ISA170170N04LMDS technical specifications.
| Transistor Type | Dual N-channel |
| Drain-Source Voltage | 40V |
| Continuous Drain Current (@25°C, VGS=10V) | 9.6A |
| Continuous Drain Current (@100°C, VGS=10V) | 6.1A |
| Continuous Drain Current (@100°C, VGS=4.5V) | 5.2A |
| Pulsed Drain Current | 38A |
| Drain-Source On-Resistance Max (@10V) | 17mΩ |
| Drain-Source On-Resistance Max (@4.5V) | 23.6mΩ |
| Gate Threshold Voltage Range | 1.1 to 2.7V |
| Total Gate Charge Typ (@4.5V) | 6.0nC |
| Total Gate Charge Typ (@10V) | 13nC |
| Output Charge Typ | 7.8nC |
| Input Capacitance Typ | 880pF |
| Output Capacitance Typ | 220pF |
| Reverse Transfer Capacitance Typ | 15pF |
| Operating Temperature Range | -55 to 150°C |
| Package | PG-DSO-8 / SO-8 |
| Thermal Resistance Junction-to-Ambient | 90°C/W |
| Thermal Resistance Junction-to-Solder Point | 50°C/W |
| Special Features | Logic Level |
| RoHS | Compliant |
| Lead-free | Yes |
| Halogen Free | Yes |
No datasheet is available for this part.
