This dual N+P channel logic-level power MOSFET integrates complementary 30 V devices in a compact SO-8 package. The n-channel path is rated to 8.4 A with up to 22 mΩ RDS(on) at 10 V, while the p-channel path is rated to -8.1 A with up to 28 mΩ at 10 V. It operates from -55 °C to 150 °C and is qualified according to JEDEC standards with 100% avalanche testing. The device uses Pb-free lead plating, is RoHS compliant, and is halogen-free according to IEC 61249-2-21.
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Infineon ISA220280C03LMDS technical specifications.
| Channel Configuration | Dual N+P |
| Drain-Source Voltage (N-channel) | 30V |
| Drain-Source Voltage (P-channel) | -30V |
| Continuous Drain Current (N-channel, 25°C) | 8.4A |
| Continuous Drain Current (P-channel, 25°C) | -8.1A |
| On-Resistance (N-channel, VGS=10 V, max) | 22mΩ |
| On-Resistance (P-channel, VGS=-10 V, max) | 28mΩ |
| On-Resistance (N-channel, VGS=4.5 V, max) | 25mΩ |
| On-Resistance (P-channel, VGS=-4.5 V, max) | 37mΩ |
| Gate Threshold Voltage (N-channel) | 1.1 to 2.7V |
| Gate Threshold Voltage (P-channel) | -1.1 to -2.7V |
| Operating Temperature Range | -55 to 150°C |
| Total Gate Charge (N-channel, typ @ 4.5 V) | 4.2nC |
| Total Gate Charge (P-channel, typ @ -4.5 V) | -7.2nC |
| Input Capacitance (N-channel, typ) | 620pF |
| Input Capacitance (P-channel, typ) | 1100pF |
| Thermal Resistance Junction-to-Ambient | 90°C/W |
| Special Features | Logic Level |
| RoHS | Yes |
| Lead-free | Yes |
| Halogen Free | Yes |
No datasheet is available for this part.
