This N-channel power MOSFET is rated for 80 V drain-source voltage and 279 A maximum drain current at 25°C. It uses Infineon OptiMOS™ 6 technology in a SuperSO8 FL package with a maximum RDS(on) of 1.45 mΩ at 10 V and typical total gate charge of 79 nC. The device operates from -55°C to 175°C and is intended for high-frequency switching and synchronous rectification applications. The exact orderable part is supplied in tape and reel packaging and is specified as RoHS compliant and halogen free.
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| Drain-Source Voltage | 80V |
| Continuous Drain Current (@25°C) | 279A |
| On-Resistance RDS(on) Max (@10V) | 1.45mΩ |
| Total Gate Charge Qg Typ (@10V) | 79nC |
| Gate Threshold Voltage Typ | 3V |
| Gate Threshold Voltage Min | 2.4V |
| Gate Threshold Voltage Max | 3.5V |
| Operating Temperature Min | -55°C |
| Operating Temperature Max | 175°C |
| Polarity | N-Channel |
| Package | SuperSO8 5x6 |
| Package Code | PG-TSON-8-3 |
| Packing Type | Tape & Reel |
| Moisture Sensitivity Level | 1 |
| Moisture Packing | NON DRY |
| RoHS Compliant | Yes |
| Halogen Free | Yes |
| Lead Free | No |
