This device is a 60 V OptiMOS™ 5 single N-channel linear FET with a maximum RDS(on) of 1.55 mΩ at 10 V and a maximum continuous drain current of 275 A at 25 °C. It is housed in a low-profile SuperSO8 FL package with a 5 x 6 mm footprint and is designed to provide a wide safe operating area for linear-mode operation. The MOSFET supports an operating temperature range of -55 °C to 175 °C, has a typical total gate charge of 90 nC at 10 V, and a gate-threshold range of 2.25 V to 3.45 V. It is intended for high in-rush current and protection functions such as hot-swap, e-fuse, telecom, data server, and battery management applications.
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| Transistor Type | N-Channel Linear FET |
| Drain-Source Voltage | 60V |
| Continuous Drain Current (@25°C) | 275A |
| On-Resistance RDS(on) Max (@10V) | 1.55mΩ |
| Total Gate Charge Qg Typ (@10V) | 90nC |
| Gate Threshold Voltage Range | 2.25 to 3.45V |
| Gate Threshold Voltage Typ | 3V |
| Operating Temperature Range | -55 to 175°C |
| Package | SuperSO8 5x6 FL |
| Infineon Package | PG-TDSON-8 |
| Special Features | Wide SOA |
| Polarity | N |
| RoHS | Yes |
| Halogen Free | Yes |
| Lead-free | No |
