This N-channel power MOSFET uses OptiMOS™ 6 technology and is rated for 80 V drain-source voltage in a SuperSO8 5x6 FL package. It supports up to 230 A continuous drain current at 25 °C, with a maximum on-resistance of 1.8 mΩ at 10 V and a typical total gate charge of 63 nC at 10 V. Gate threshold voltage is specified from 2.4 V to 3.5 V, with a typical value of 3 V. The device operates from -55 °C to 175 °C and is halogen free and RoHS compliant.
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| Technology | OptiMOS™ 6 |
| Polarity | N |
| Drain-Source Voltage | 80V |
| Continuous Drain Current @25°C | 230A |
| On-Resistance @10V max | 1.8mΩ |
| Total Gate Charge typ @10V | 63nC |
| Gate Threshold Voltage Range | 2.4 to 3.5V |
| Gate Threshold Voltage Typical | 3V |
| Operating Temperature Range | -55 to 175°C |
| Package | SuperSO8 5x6 FL |
| Infineon Package | PG-TDSON-8 |
| Packing Type | TAPE & REEL |
| RoHS Compliant | Yes |
| Halogen Free | Yes |
| Lead-free | No |
