This device is a 40 V N-channel power MOSFET built on Infineon OptiMOS™ 5 technology for normal-level gate drive applications. It provides a maximum RDS(on) of 3.6 mΩ at 10 V, a continuous drain current of 98 A at 25°C, and a pulsed drain current of 392 A. The MOSFET is offered in a SuperSO8 FL package with fused leads and supports operation from -55°C to 175°C. Typical total gate charge is 21 nC at 10 V, and the maximum power dissipation is 63 W. The part is RoHS compliant, halogen free, and specified with a gate threshold voltage range of 2.2 V to 3.4 V.
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Infineon ISC036N04NM5 technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 40V |
| Drain Current (25°C) | 98A |
| Pulsed Drain Current | 392A |
| On-Resistance RDS(on) max at 10 V | 3.6mΩ |
| Gate Charge Qg typ at 10 V | 21nC |
| Gate Threshold Voltage Range | 2.2 to 3.4V |
| Power Dissipation Ptot max | 63W |
| Operating Temperature Range | -55 to 175°C |
| Package | SuperSO8 5x6 |
| Special Features | Fused leads |
| RoHS | Compliant |
| Halogen Free | Yes |
| Lead Free | No |
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