This device is a 150 V N-channel power MOSFET in Infineon’s OptiMOS™ 6 family. It is offered in the PG-TSON-8-3 package marketed as SuperSO8 FL and specifies a maximum RDS(on) of 4.4 mΩ at 10 V with typical gate charge of 55 nC. The transistor is rated for 156 A continuous drain current at 25°C, 624 A pulsed drain current, and 250 W maximum power dissipation. It operates over a junction temperature range of -55°C to 175°C and is listed as RoHS compliant and halogen free.
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Infineon ISC044N15NM6 technical specifications.
| Transistor Type | N-channel MOSFET |
| Drain-Source Voltage (VDS) Max | 150V |
| Drain Current (ID) Max @25°C | 156A |
| Pulsed Drain Current (IDpuls) Max | 624A |
| Power Dissipation (Ptot) Max | 250W |
| Gate Charge (Qg) Typ @10V | 55nC |
| On-Resistance (RDS(on)) Max @10V | 4.4mΩ |
| Gate Threshold Voltage (VGS(th)) Range | 3 to 4V |
| Gate Threshold Voltage (VGS(th)) Typ | 3.5V |
| Operating Temperature Range | -55 to 175°C |
| Package | SuperSO8 5x6 |
| Special Features | Fused leads |
| RoHS Compliant | Yes |
| Halogen Free | Yes |
| Lead-free | No |
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