This 40 V N-channel power MOSFET uses OptiMOS™ 5 technology and is offered in a SuperSO8 5x6 package with fused leads. It is rated for 77 A continuous drain current at 25°C, 308 A pulsed drain current, and 50 W maximum power dissipation. Maximum on-resistance is 4.6 mΩ at 10 V, typical total gate charge is 16 nC at 10 V, and gate threshold voltage ranges from 2.2 V to 3.4 V. The device operates from -55°C to 175°C and is intended for normal-level drive applications with improved immunity to unwanted turn-on in noisy environments. The ISC046N04NM5ATMA1 orderable version is supplied on tape and reel, is RoHS compliant, and is halogen free.
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Infineon ISC046N04NM5 technical specifications.
| Drain-Source Voltage | 40V |
| Continuous Drain Current | 77A |
| Pulsed Drain Current | 308A |
| Operating Temperature Min | -55°C |
| Operating Temperature Max | 175°C |
| Package | SuperSO8 5x6 |
| Polarity | N-channel |
| Power Dissipation | 50W |
| Total Gate Charge | 16nC |
| Drain-Source On-Resistance | 4.6mΩ |
| Gate Threshold Voltage Min | 2.2V |
| Gate Threshold Voltage Max | 3.4V |
| Special Features | Fused leads |
| RoHS | Compliant |
| Halogen Free | Yes |
| Lead-free | No |
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