This N-channel power MOSFET uses OptiMOS™ 6 technology with a 135 V drain-source rating and 4.6 mΩ maximum RDS(on) at 10 V. It is housed in a SuperSO8 5x6 / PG-TDSON-8 package and supports up to 142 A continuous drain current at 25°C. Typical gate charge is 65 nC at 10 V, and the gate-threshold range is 2.5 V to 3.5 V. The device operates from -55°C to 175°C and is intended for motor drives and UPS applications. It is RoHS compliant, halogen free, and classified MSL 1.
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Infineon ISC046N13NM6 technical specifications.
| Transistor polarity | N-channel |
| Drain-source voltage (VDS) max | 135V |
| Continuous drain current (ID) at 25°C max | 142A |
| On-resistance RDS(on) max at 10 V | 4.6mΩ |
| Gate charge (QG) typ at 10 V | 65nC |
| Gate threshold voltage min | 2.5V |
| Gate threshold voltage typ | 3V |
| Gate threshold voltage max | 3.5V |
| Operating temperature min | -55°C |
| Operating temperature max | 175°C |
| Package | SuperSO8 5x6 |
| Moisture sensitivity level | 1 |
| RoHS | Compliant |
| Halogen Free | Yes |
| Lead-free | No |
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