This device is a 150 V N-channel power MOSFET in Infineon’s OptiMOS™ 6 family with normal-level gate drive behavior. It is offered in a PG-TDSON-8-64 SuperSO8 5x6 FL package and supports up to 130 A continuous drain current at 25°C, 520 A pulsed drain current, and 214 W power dissipation. The maximum drain-source on-resistance is 5.5 mΩ at 10 V gate drive, and the typical total gate charge is 43 nC. The gate threshold voltage is specified from 3 V to 4 V, the operating temperature range is -55°C to 175°C, and the package includes fused leads. The device is qualified for industrial applications and is specified as RoHS compliant and halogen free.
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Infineon ISC055N15NM6 technical specifications.
| Drain-Source Voltage | 150V |
| Continuous Drain Current | 130 @ 25°CA |
| Pulsed Drain Current | 520A |
| Power Dissipation | 214W |
| Drain-Source On-Resistance | 5.5 max @ VGS=10 VmΩ |
| Total Gate Charge | 43 typ @ VGS=10 VnC |
| Gate Threshold Voltage | 3 to 4V |
| Operating Temperature | -55 to 175°C |
| Package | PG-TDSON-8-64 (SuperSO8 5x6 FL) |
| Polarity | N-Channel |
| Special Features | Fused leads |
| Moisture Sensitivity Level | 1 |
| Packing | Tape & Reel |
| Qualification | JEDEC industrial applications |
| RoHS | Compliant |
| Halogen Free | Yes |
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