This device is an 80 V N-channel power MOSFET built on OptiMOS 6 technology and offered in a SuperSO8 FL 5x6 package. It supports a maximum drain current of 88 A at 25°C, a maximum RDS(on) of 5.6 mΩ at 10 V, and a typical total gate charge of 21 nC at 10 V. The MOSFET operates over a temperature range of -55°C to 175°C and has a gate threshold voltage range of 2.4 V to 3.5 V. It is intended for high-switching-frequency power stages in telecom, server, solar, battery-powered, and battery management applications.
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| Channel Type | N-channel |
| Drain-Source Voltage | 80V |
| Continuous Drain Current (@25°C) | 88A |
| On-Resistance RDS(on) max (@10V) | 5.6mΩ |
| Total Gate Charge QG typ (@10V) | 21nC |
| Gate Threshold Voltage Range | 2.4 to 3.5V |
| Gate Threshold Voltage Typical | 3V |
| Operating Temperature Range | -55 to 175°C |
| Package | SuperSO8 5x6 FL |
| Infineon Package | PG-TDSON-8-37 |
| Moisture Sensitivity Level | 1 |
| RoHS Compliant | Yes |
| Halogen Free | Yes |
| Lead-free | No |
