This N-channel power MOSFET is part of Infineon's OptiMOS™ 6 150 V family and is offered in a PG-TDSON-8 SuperSO8 5x6 package. It is rated for 150 V drain-source voltage, 95 A continuous drain current at 25°C, and 380 A pulsed drain current. The device provides a maximum 7.9 mΩ on-resistance at 10 V gate drive, 31 nC typical total gate charge, and 66 nC typical reverse-recovery charge at 500 A/μs. It supports operation from -55°C to 175°C and is specified with 165 W maximum power dissipation and 0.91 °C/W junction-to-case thermal resistance. The part is RoHS compliant and halogen-free, and it is designed for applications such as server PSUs, telecom infrastructure, battery energy storage, and photovoltaic systems.
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Infineon ISC079N15NM6 technical specifications.
| Drain-Source Voltage | 150V |
| Continuous Drain Current @25°C | 95A |
| Pulsed Drain Current | 380A |
| Drain-Source On-Resistance Max @10V | 7.9mΩ |
| Gate Threshold Voltage Typ | 3.5V |
| Gate-Source Voltage | -20 to 20V |
| Power Dissipation Max | 165W |
| Operating Junction Temperature Range | -55 to 175°C |
| Thermal Resistance Junction-to-Case | 0.91°C/W |
| Input Capacitance Typ | 2200pF |
| Output Capacitance Typ | 700pF |
| Reverse Transfer Capacitance Typ | 12pF |
| Total Gate Charge Typ | 31nC |
| Output Charge Typ | 94nC |
| Reverse Recovery Charge Typ @500A/μs | 66nC |
| Reverse Recovery Time Typ @500A/μs | 26ns |
| Avalanche Energy Single Pulse | 437mJ |
| RoHS | Compliant |
| Halogen Free | Yes |
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