This device is a P-channel OptiMOS small-signal transistor rated for -100 V drain-source voltage and packaged in PG-SOT223-4. It supports up to -3.9 A continuous drain current at VGS = -10 V and TC = 25 °C, with a maximum on-resistance of 167 mΩ at VGS = -10 V and 190 mΩ at VGS = -4.5 V. The MOSFET is logic-level and enhancement-mode, with total gate charge of 21 nC at VGS from 0 to -4.5 V and 41 nC at VGS from 0 to -10 V. It is qualified to AEC-Q101 and is specified as Pb-free, RoHS compliant, and halogen-free according to IEC61249-2-21. The operating and storage junction temperature range is -55 °C to 150 °C.
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Infineon ISP16DP10LMA technical specifications.
| Channel Type | P-channel |
| Drain-Source Voltage | -100V |
| Continuous Drain Current | -3.9A |
| Pulsed Drain Current | -15.6A |
| Gate-Source Voltage | ±20V |
| Power Dissipation | 5.0W |
| Operating Junction Temperature | -55 to 150°C |
| Thermal Resistance Junction-Solder Point | 25°C/W |
| Thermal Resistance Junction-Ambient | 70°C/W |
| Gate Threshold Voltage | -1.5 typV |
| Drain-Source On-Resistance | 167 max @ VGS=-10 VmΩ |
| Drain-Source On-Resistance | 190 max @ VGS=-4.5 VmΩ |
| Input Capacitance | 1600 typpF |
| Output Capacitance | 100 typpF |
| Reverse Transfer Capacitance | 24 typpF |
| Total Gate Charge | 21 typ @ VGS=0 to -4.5 VnC |
| Total Gate Charge | 41 typ @ VGS=0 to -10 VnC |
| Output Charge | 12.7 typnC |
| Reverse Recovery Time | 45 typns |
| Reverse Recovery Charge | 120 typnC |
| RoHS | Compliant |
| Lead Free | Pb-free lead plating |
| Halogen Free | According to IEC61249-2-21 |
| Aec-q101 | Qualified |
No datasheet is available for this part.
