This N-channel power MOSFET is rated for 60 V drain-source voltage and delivers a maximum RDS(on) of 3.4 mΩ at 10 V gate drive. It is housed in a compact PQFN 3.3 x 3.3 fused-lead package and is intended for high-efficiency, high-power-density designs. The device supports up to 112 A continuous drain current at 25°C and operates over a junction temperature range of -55°C to 175°C. Typical total gate charge is 40 nC at 10 V and 20 nC at 4.5 V, and the device is specified as logic-level. Typical applications include synchronous rectification in switched-mode power supplies, telecom bricks, server power stages, and portable chargers.
Checking distributor stock and pricing after the page loads.
| Drain-Source Voltage | 60V |
| Continuous Drain Current @25°C | 112A |
| Operating Temperature Range | -55 to 175°C |
| Package | PQFN 3.3 x 3.3 Fused Lead |
| Polarity | N-Channel |
| Total Gate Charge Typ @10V | 40nC |
| Total Gate Charge Typ @4.5V | 20nC |
| RDS(on) Max @10V | 3.4mΩ |
| RDS(on) Max @4.5V | 4.2mΩ |
| Gate Threshold Voltage Range | 1.1 to 2.3V |
| Gate Threshold Voltage Typ | 1.7V |
| Special Features | Logic Level |
| Infineon Package | PG-TSDSON-8 |
| Packing Type | TAPE & REEL |
| Moisture Sensitivity Level | 1 |
| RoHS Compliant | Yes |
| Halogen Free | Yes |
| Lead-free | No |
