This OptiMOS™ 5 linear FET is a 100 V N-channel MOSFET rated for 63 A continuous drain current at 25°C with a maximum RDS(on) of 11.3 mΩ at 10 V gate drive. It is intended for hot swap, battery protection, e-fuse, and current-sharing applications, and it features a wide safe operating area with tight gate-threshold spread. The device is housed in a PQFN 3.3 x 3.3 package with Infineon package code PG-TSDSON-8. Operating and storage temperature range is -55°C to 175°C, and the device is RoHS compliant, halogen-free, and uses Pb-free lead plating.
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Infineon ISZ113N10NM5LF2 technical specifications.
| Channel Type | N-Channel |
| Technology | Linear FET |
| Drain-Source Voltage | 100V |
| Continuous Drain Current (@25°C) | 63A |
| Continuous Drain Current (@100°C) | 44A |
| Pulsed Drain Current | 252A |
| On-State Resistance RDS(on) Typ (@10V) | 10.1mΩ |
| On-State Resistance RDS(on) Max (@10V) | 11.3mΩ |
| Gate Threshold Voltage Range | 2.8 to 3.5V |
| Gate Threshold Voltage Typ | 3.15V |
| Total Gate Charge Typ | 23nC |
| Input Capacitance Typ | 1800pF |
| Power Dissipation | 100W |
| Thermal Resistance Junction-Case | 1.5°C/W |
| Operating and Storage Temperature Range | -55 to 175°C |
| RoHS | Compliant |
| Halogen Free | According to IEC61249-2-21 |
| Pb-free | Pb-free lead plating |
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