This OptiMOS™ 6 N-channel power MOSFET is rated for 80 V drain-source voltage and 37 A continuous drain current at 25 °C. It offers a maximum on-state resistance of 15.7 mΩ at 10 V gate drive and a typical total gate charge of 8.3 nC for efficient high-frequency switching. The device operates from -55 °C to 175 °C and is supplied in a PQFN 3.3 x 3.3 fused-lead package designated PG-TSDSON-8 FL. Its reverse diode has a typical reverse recovery charge of 16 nC at 100 A/µs, and the ordering option is RoHS compliant and halogen free.
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| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage Max | 80V |
| Continuous Drain Current @25°C | 37A |
| Continuous Drain Current @100°C, VGS=10V | 26A |
| Continuous Drain Current @100°C, VGS=8V | 24A |
| Operating Temperature Range | -55 to 175°C |
| On-State Resistance Max @10V | 15.7mΩ |
| On-State Resistance Typ @10V | 12.7mΩ |
| On-State Resistance Typ @8V | 15.3mΩ |
| Gate Threshold Voltage Range | 2.4 to 3.5V |
| Total Gate Charge Typ | 8.3nC |
| Output Charge Typ | 15.6nC |
| Input Capacitance Typ | 570pF |
| Output Capacitance Typ | 190pF |
| Reverse Transfer Capacitance Typ | 9pF |
| Reverse Recovery Charge Typ @100A/µs | 16nC |
| Package | PQFN 3.3 x 3.3 Fused Lead |
| Thermal Resistance Junction-to-Case Bottom Typ | 1.5°C/W |
| RoHS | Yes |
| Halogen Free | Yes |
