This device is a P-channel enhancement-mode logic-level power MOSFET rated for 150 V drain-source voltage. It provides a maximum drain-source on-resistance of 560 mΩ and supports continuous drain current up to 6.7 A at 25 °C case temperature. The transistor is housed in a PG-TSDSON-8 FL surface-mount package and is specified for junction temperatures from -55 °C to 175 °C. It is 100% avalanche tested and the orderable part is listed as EU RoHS compliant with exemption, with SVHC present above threshold.
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| Channel Type | P-Channel |
| Channel Mode | Enhancement |
| Drain-Source Voltage | 150V |
| Gate-Source Voltage | 20V |
| Continuous Drain Current (Tc=25°C) | 6.7A |
| Continuous Drain Current (Ta=25°C) | 1.35A |
| Pulsed Drain Current | 27A |
| Drain-Source On-Resistance Max | 560mΩ |
| Gate Charge Total @ 4.5 V | 15.2nC |
| Gate Charge Total @ 10 V | 30nC |
| Output Charge | 8.7nC |
| Input Capacitance | 1100pF |
| Output Capacitance | 48pF |
| Reverse Transfer Capacitance | 12pF |
| Power Dissipation (Ta=25°C) | 2.5W |
| Power Dissipation (Tc=25°C) | 62.5W |
| Avalanche Energy, Single Pulse | 210mJ |
| Operating Junction Temperature | -55 to 175°C |
| Thermal Resistance Junction-Case | 1.24 typ°C/W |
| Supplier Package | TSDSON EP |
| Pin Count | 8 |
| Mounting | Surface Mount |
| EU RoHS | Compliant with Exemption |
| Svhc | Yes |
| Svhc Exceeds Threshold | Yes |
