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Technical Specifications
Infineon PTF140451EV1 technical specifications.
General
| Package/Case | H |
| Continuous Drain Current (ID) | 550mA |
| Current Rating | 1uA |
| Drain to Source Breakdown Voltage | 65V |
| Drain to Source Resistance | 70mR |
| Drain to Source Voltage (Vdss) | 65V |
| Frequency | 1.5GHz |
| Gain | 18dB |
| Gate to Source Voltage (Vgs) | 12V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 175W |
| Output Power | 45W |
| Package Quantity | 1 |
| Packaging | Tray |
| Polarity | N-CHANNEL |
| Power Dissipation | 175W |
| Series | GOLDMOS® |
| Technology | LDMOS |
| Test Voltage | 28V |
| Voltage Rating | 65V |
Compliance
| RoHS | Not Compliant |
Datasheet
Infineon PTF140451EV1 Datasheet
Download the complete datasheet for Infineon PTF140451EV1 to view detailed technical specifications.
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