The PTF141501EV1 is a high-frequency N-CHANNEL transistor from Infineon, featuring a maximum operating temperature of 200°C and a minimum operating temperature of -40°C. It has a drain to source breakdown voltage of 65V and a gate to source voltage of 12V. The device is rated for a maximum power dissipation of 438W and an output power of 150W. It is packaged in a tray and is suitable for use in high-power applications.
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| Current Rating | 1uA |
| Drain to Source Breakdown Voltage | 65V |
| Drain to Source Resistance | 70mR |
| Drain to Source Voltage (Vdss) | 65V |
| Frequency | 1.5GHz |
| Gain | 16.5dB |
| Gate to Source Voltage (Vgs) | 12V |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 438W |
| Output Power | 150W |
| Package Quantity | 1 |
| Packaging | Tray |
| Polarity | N-CHANNEL |
| Power Dissipation | 438W |
| Series | GOLDMOS® |
| Technology | LDMOS |
| Test Voltage | 28V |
| Voltage Rating | 65V |
| RoHS | Compliant |
Download the complete datasheet for Infineon PTF141501EV1 to view detailed technical specifications.
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