The 512 Mbit SPI Multi-I/O NOR flash memory provides 64 MB of nonvolatile storage using 65 nm MIRRORBIT technology and Eclipse architecture. It supports single, dual, and quad SPI operation with SDR interface frequency up to 133 MHz and interface bandwidth of 52 MByte/s. The memory operates from a 2.7 V to 3.6 V core supply with a 3 V nominal operating voltage. The SOIC-16 packaged device is specified for -40 °C to 85 °C industrial operation, 100,000 program-erase cycles, and 20-year data retention.
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| Density | 512Mbit |
| Memory size | 64MB |
| Family | FL-S |
| Interface | Quad SPI |
| Interface bandwidth | 52MByte/s |
| Interface frequency SDR | 133MHz |
| Operating voltage range | 2.7 to 3.6V |
| Nominal operating voltage | 3V |
| Operating temperature range | -40 to 85°C |
| Qualification | Industrial |
| Endurance | 100000cycles |
| Data retention | 20years |
| Lead/ball finish | Matte Tin Plating |
| Peak reflow temperature | 260°C |
| Moisture sensitivity level | 3 |
| RoHS | Compliant |
| Lead-free | Yes |
| Halogen Free | Yes |
These are design resources that include the Infineon S25FL512SAGMFIR10
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