The SPI20N65C3 is a 20.7A N-CHANNEL MOSFET with a drain to source breakdown voltage of 650V and a fall time of 4.5ns. It is packaged in a TO-262-3 package and is rated for a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. The device is lead free and RoHS compliant. It has a maximum power dissipation of 208W and a maximum drain to source resistance of 190mR.
PackageTO-262-3
Current Rating20.7A
PolarityN-CHANNEL
Power208W
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Technical Specifications
Infineon SPI20N65C3 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 20.7A |
| Current Rating | 20.7A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 190mR |
| Fall Time | 4.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 208W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 208W |
| Rds On Max | 190mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 67ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 650V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPI20N65C3 Datasheet
Download the complete datasheet for Infineon SPI20N65C3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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