Infineon
SPI42N03S2L-13
Power Field-Effect Transistor, 42A I(D), 30V, 0.0199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN
Power Field-Effect Transistor, 42A I(D), 30V, 0.0199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN
PackageTO-262-3
MountingThrough Hole
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Technical Specifications
Infineon SPI42N03S2L-13 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 42A |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance | 1.13nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Rds On Max | 12.9mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPI42N03S2L-13 Datasheet
Download the complete datasheet for Infineon SPI42N03S2L-13 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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