International Rectifier
2N6766
Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN
PackageTO-204AE
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Technical Specifications
International Rectifier 2N6766 technical specifications.
General
| Package/Case | TO-204AE |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 85mR |
| Drain to Source Voltage (Vdss) | 200V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Nominal Vgs | 2V |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier 2N6766 Datasheet
Download the complete datasheet for International Rectifier 2N6766 to view detailed technical specifications.
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