The 2N6782 is a TO-205AF packaged N-channel MOSFET with a maximum drain to source breakdown voltage of 100V and a continuous drain current of 3.5A. It has a maximum operating temperature range of -55°C to 150°C and a maximum power dissipation of 15W. The device is not radiation hardened and is not compliant with RoHS or Reach SVHC. It is packaged in a bulk package and has a nominal Vgs of 4V.
PackageTO-205AF
MountingThrough Hole
Power15W
Quick Jump:
Technical Specifications
International Rectifier 2N6782 technical specifications.
General
| Package/Case | TO-205AF |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 690mR |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 15W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Packaging | Bulk |
| Power Dissipation | 15W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
International Rectifier 2N6782 Datasheet
Download the complete datasheet for International Rectifier 2N6782 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
