International Rectifier
2N6782
Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
PackageTO-205AF
MountingThrough Hole
Power15W
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Technical Specifications
International Rectifier 2N6782 technical specifications.
General
| Package/Case | TO-205AF |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 690mR |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 15W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Packaging | Bulk |
| Power Dissipation | 15W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
International Rectifier 2N6782 Datasheet
Download the complete datasheet for International Rectifier 2N6782 to view detailed technical specifications.
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