N-Channel Power MOSFET, 60V drain-source voltage, 84A continuous drain current, and 8.5mΩ maximum drain-source on-resistance. Features a 2V threshold voltage, 2.81nF input capacitance, and 140W maximum power dissipation. Designed for through-hole mounting in a TO-220AB package, operating from -55°C to 175°C. RoHS compliant with fast switching times, including 19ns turn-on and 38ns turn-off delay.
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International Rectifier AUIRF1010EZ technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 84A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 8.5MR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 16.51mm |
| Input Capacitance | 2.81nF |
| Lead Free | Lead Free |
| Length | 10.66mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 140W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 140W |
| Radiation Hardening | No |
| Rds On Max | 8.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 19ns |
| Width | 4.82mm |
| RoHS | Compliant |
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