N-Channel Power MOSFET, TO-262 package, featuring 40V drain-source voltage and 160A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 3.7mΩ Rds On and 200W maximum power dissipation. Operating temperature range spans from -55°C to 175°C, with 18ns turn-on and 36ns turn-off delay times. Through-hole mounting and RoHS compliance are standard.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the International Rectifier AUIRF1404ZL datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 160A |
| Drain to Source Voltage (Vdss) | 40V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 11.3mm |
| Input Capacitance | 4.34nF |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 200W |
| Radiation Hardening | No |
| Rds On Max | 3.7mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 36ns |
| Turn-On Delay Time | 18ns |
| Width | 4.83mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier AUIRF1404ZL to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
