N-Channel Power MOSFET, TO-262 package, featuring 40V drain-source voltage and 160A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 3.7mΩ Rds On and 200W maximum power dissipation. Operating temperature range spans from -55°C to 175°C, with 18ns turn-on and 36ns turn-off delay times. Through-hole mounting and RoHS compliance are standard.
PackageTO-262
MountingThrough Hole
Power200W
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Technical Specifications
International Rectifier AUIRF1404ZL technical specifications.
General
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 160A |
| Drain to Source Voltage (Vdss) | 40V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 11.3mm |
| Input Capacitance | 4.34nF |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 200W |
| Radiation Hardening | No |
| Rds On Max | 3.7mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 36ns |
| Turn-On Delay Time | 18ns |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRF1404ZL Datasheet
Download the complete datasheet for International Rectifier AUIRF1404ZL to view detailed technical specifications.
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