N-Channel Power MOSFET, D2PAK package, offering 150A continuous drain current and 55V drain-to-source breakdown voltage. Features low 4.9mΩ drain-to-source resistance and 230W maximum power dissipation. Operates from -55°C to 175°C with fast switching times, including 18ns turn-on delay and 82ns fall time. This surface-mount silicon FET is RoHS compliant.
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International Rectifier AUIRF1405ZSTRL technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 150A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 4.9mR |
| Drain to Source Voltage (Vdss) | 55V |
| Element Configuration | Single |
| Fall Time | 82ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 4.78nF |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 230W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Power Dissipation | 230W |
| Radiation Hardening | No |
| Rds On Max | 4.9mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 48ns |
| Turn-On Delay Time | 18ns |
| Width | 9.65mm |
| RoHS | Compliant |
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