N-Channel Power MOSFET, 55V Drain-Source Voltage, 135A Continuous Drain Current, and 4.7mΩ Drain-Source Resistance. This silicon, metal-oxide semiconductor FET features a D2PAK surface-mount package, 200W maximum power dissipation, and operates across a wide temperature range of -55°C to 175°C. Key electrical characteristics include 5.11nF input capacitance and fast switching times with 14ns turn-on and 68ns turn-off delays. RoHS compliant.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power200W
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Technical Specifications
International Rectifier AUIRF2805S technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 135A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 4.7mR |
| Drain to Source Voltage (Vdss) | 55V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 5.11nF |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 200W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 68ns |
| Turn-On Delay Time | 14ns |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRF2805S Datasheet
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