The AUIRF3205ZSTRR is a surface mount N-channel HEXFET MOSFET with a maximum operating temperature range of -55°C to 175°C. It features a maximum power dissipation of 170W and a continuous drain current of 110A. The device has a drain to source breakdown voltage of 55V and a drain to source resistance of 6.5mR. It is packaged in a TO-263-3 case and is RoHS compliant.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
Power170W
Quick Jump:
Technical Specifications
International Rectifier AUIRF3205ZSTRR technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 110A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 6.5mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 67ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.45nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 170W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 170W |
| Radiation Hardening | No |
| Rds On Max | 6.5mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 18ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRF3205ZSTRR Datasheet
Download the complete datasheet for International Rectifier AUIRF3205ZSTRR to view detailed technical specifications.
No datasheet is available for this part.