International Rectifier
AUIRF6215STRR
Power Field-Effect Transistor, 13A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2
PackageTO-263-3
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
International Rectifier AUIRF6215STRR technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Resistance | 290mR |
| Drain to Source Voltage (Vdss) | 150V |
| Fall Time | 37ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 860pF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.8W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 290mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 53ns |
| Turn-On Delay Time | 14ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRF6215STRR Datasheet
Download the complete datasheet for International Rectifier AUIRF6215STRR to view detailed technical specifications.
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