The AUIRF7309QTR is a dual N-channel MOSFET from International Rectifier, featuring a maximum drain to source voltage of 30V and a continuous drain current of 4A. It is packaged in a SOIC N package and is designed for surface mount applications. The device operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.4W. The AUIRF7309QTR is compliant with RoHS regulations and is available in tape and reel packaging.
PackageSOIC N
MountingSurface Mount
Power1.4W
Quick Jump:
Chat with Datasheet
Sponsored by
Sign in to ask questions about the International Rectifier AUIRF7309QTR datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Technical Specifications
International Rectifier AUIRF7309QTR technical specifications.
General
| Package/Case | SOIC N |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Voltage (Vdss) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.4W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Number of Elements | 2 |
| Packaging | Tape and Reel |
| Power Dissipation | 1.4W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRF7309QTR Datasheet
Download the complete datasheet for International Rectifier AUIRF7309QTR to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
Product Images
