International Rectifier
AUIRF7309QTR
Power Field-Effect Transistor, 4A I(D), 30V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8
PackageSOIC N
MountingSurface Mount
Power1.4W
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Technical Specifications
International Rectifier AUIRF7309QTR technical specifications.
General
| Package/Case | SOIC N |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Voltage (Vdss) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.4W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Number of Elements | 2 |
| Packaging | Tape and Reel |
| Power Dissipation | 1.4W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRF7309QTR Datasheet
Download the complete datasheet for International Rectifier AUIRF7309QTR to view detailed technical specifications.
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