International Rectifier
AUIRF7416QTR
Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8
Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power2.5W
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Technical Specifications
International Rectifier AUIRF7416QTR technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 35mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.7nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 20mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRF7416QTR Datasheet
Download the complete datasheet for International Rectifier AUIRF7416QTR to view detailed technical specifications.
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