N-channel MOSFET with 100V drain-source breakdown voltage and 4.4mR maximum drain-source on-resistance. Features 19A continuous drain current, 4V nominal gate-source voltage, and 175°C maximum operating temperature. Surface mount component with 7.1mm width, 9.15mm length, and 0.74mm height, supplied on tape and reel. RoHS compliant with 15ns turn-on delay and 27ns turn-off delay.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the International Rectifier AUIRF7669L2TR1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Continuous Drain Current (ID) | 19A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 4.4mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 4.4MR |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.74mm |
| Input Capacitance | 5.66nF |
| Lead Free | Lead Free |
| Length | 9.15mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.3W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 100W |
| Radiation Hardening | No |
| Rds On Max | 4.4mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 15ns |
| Width | 7.1mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier AUIRF7669L2TR1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
