N-channel power MOSFET, surface mountable in a DPAK package, featuring a 40V drain-source breakdown voltage and a continuous drain current of 119A. Achieves a low 5.5mΩ drain-source on-resistance, with fast switching characteristics including a 17ns turn-on delay and 36ns fall time. Operates across a wide temperature range from -55°C to 175°C, supporting a maximum power dissipation of 140W. This RoHS compliant component is supplied on tape and reel.
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International Rectifier AUIRFR4104TR technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 119A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 5.5mR |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 5.5MR |
| Fall Time | 36ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.95nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 140W |
| Mount | Surface Mount |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 140W |
| Radiation Hardening | No |
| Rds On Max | 5.5mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 37ns |
| Turn-On Delay Time | 17ns |
| RoHS | Compliant |
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