Power Field-Effect Transistor, 195A I(D), 40V, 0.00175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3
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International Rectifier AUIRFS3004TRL technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 340A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 1.4mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 130ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 9.2nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 380W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 380W |
| Radiation Hardening | No |
| Rds On Max | 1.75mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 90ns |
| Turn-On Delay Time | 23ns |
| RoHS | Compliant |
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