International Rectifier
AUIRFZ34N
Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3
Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3
PackageTO-220AB
MountingThrough Hole
Power68W
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Technical Specifications
International Rectifier AUIRFZ34N technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 29A |
| Drain to Source Voltage (Vdss) | 55V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 16.13mm |
| Input Capacitance | 700pF |
| Length | 10.75mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 68W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 68W |
| Radiation Hardening | No |
| Rds On Max | 40mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 31ns |
| Turn-On Delay Time | 7ns |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRFZ34N Datasheet
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