N-channel MOSFET, a surface-mount electronic component in a SOT-223 package, offers a continuous drain current of 2A and a drain-to-source breakdown voltage of 55V. Featuring a low drain-to-source resistance of 140mΩ, this device operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1W. Its fast switching characteristics include a fall time of 2.9ns and turn-off delay time of 14ns, complemented by an input capacitance of 230pF.
PackageSOT-223
MountingSurface Mount
PolarityN-CHANNEL
Power1W
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Technical Specifications
International Rectifier AUIRLL014N technical specifications.
General
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 140mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 2.9ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 1.8mm |
| Input Capacitance | 230pF |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 80 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Rds On Max | 140mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 5.1ns |
| Width | 3.7mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier AUIRLL014N Datasheet
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