Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
International Rectifier AUIRLL014NTR technical specifications.
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 140mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 2.9ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 230pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Rds On Max | 140mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 5.1ns |
| RoHS | Compliant |
No datasheet is available for this part.
