
N-channel power MOSFET, 55V drain-source breakdown voltage, 17A continuous drain current, and 65mΩ maximum drain-source on-resistance. Features a 1.0V threshold voltage, 7.1ns turn-on delay, and 20ns turn-off delay. Operates from -55°C to 175°C with a maximum power dissipation of 45W. Surface-mount DPAK package, RoHS compliant.
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International Rectifier AUIRLR024N technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 65mR |
| Drain to Source Voltage (Vdss) | 55V |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 2.39mm |
| Input Capacitance | 480pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 45W |
| Radiation Hardening | No |
| Rds On Max | 65mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 7.1ns |
| Width | 6.22mm |
| RoHS | Compliant |
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